issue 1 - december 2008 1 www.zetex.com ? diodes incorporated, 2008 www.diodes.com a product line of diodes incorporated ZXMS6004SG 60v n-channel self protected enhancement mode intellifet mosfet summary continuous drain source voltage 60 v on-state resistance 500 m nominal load current (v in = 5v) 1.3 a clamping energy 480mj description the ZXMS6004SG is a self protected low side mosfet with logic level input. it integrates over-temperature, over-current, over-voltage (active clamp) and esd protected logic leve l functionality. the ZXMS6004SG is ideal as a general purpose switch driven from 3.3v or 5v microcontrollers in harsh environments where standard mosfets are not rugged enough. features ? compact high power dissipation package ? low input current ? logic level input (3.3v and 5v) ? short circuit protection with auto restart ? over voltage protection (active clamp) ? thermal shutdown with auto restart ? over-current protection ? input protection (esd) ? high continuous current rating ordering information device part mark reel size (inches) tape width (mm) quantity per reel zxms66004sgta zxms 6004s 7 12 embossed 3,000 units s sot223 s d in
ZXMS6004SG issue 1 - december 2008 2 www.zetex.com ? diodes incorporated, 2008 www.diodes.com functional block diagram application information ? especially suited for loads with a high in-rush current such as lamps and motors. ? all types of resistive, inductive and capacitive loads in switching applications. ? c compatible power switch for 12v and 24v dc applications. ? automotive rated. ? replaces electromechanical re lays and discrete circuits. ? linear mode capability - the current-limiting pr otection circuitry is designed to de-activate at low v ds to minimise on state power dissipati on. the maximum dc operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. this does not compromi se the product?s ability to self-protect at low v ds . over-voltage protection esd protection over-temperature protection over-current protection logic dv/dt limitation in d s
ZXMS6004SG issue 1 - december 2008 3 www.zetex.com ? diodes incorporated, 2008 www.diodes.com absolute maximum ratings thermal resistance notes (a) for a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm fr4 board, in still air conditions. (b) for a device surface mounted on 50mm x 50mm single si ded 2oz weight copper on 1.6mm fr4 board in still air conditions. (c) thermal resistance from junction to the mounting surface of the drain pin. parameter symbol limit unit continuous drain-source voltage v ds 60 v drain-source voltage for short circuit protection v ds(sc) 36 v continuous input voltage v in -0.5 ... +6 v continuous input current -0.2v v in 6v v in <-0.2v or v in >6v i in no limit i in 2 ma operating temperature range t j , -40 to +150 c storage temperature range t stg -55 to +150 c power dissipation at t a =25c (a) linear derating factor p d 1.0 8.0 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.6 12.8 w mw/c pulsed drain current @ v in =3.3v i dm 2a pulsed drain current @ v in =5v i dm 2.5 a continuous source current (body diode) (a) i s 1a pulsed dource current (body diode) i sm 5a unclamped single puls e inductive energy, tj=25c, i d =0.5a, v dd =24v e as 480 mj electrostatic discharge (human body model) v esd 4000 v charged device model v cdm 1000 v parameter symbo value unit junction to ambient (a) r ja 125 q c/w junction to ambient (b) r ja 83 q c/w junction to case (c) r jc 39 q c/w
ZXMS6004SG issue 1 - december 2008 4 www.zetex.com ? diodes incorporated, 2008 www.diodes.com recommended opera ting conditions the ZXMS6004SG is optimised for use with c operating from 3.3v and 5v supplies. characteristics symbol description min max units v in input voltage range 0 5.5 v t a ambient temperature range -40 125 c v ih high level input voltage for mosfet to be on 3 5.5 v v il low level input voltage for mosfet to be off 0 0.7 v v p peripheral supply voltage (voltage to which load is referred) 0 36 v
ZXMS6004SG issue 1 - december 2008 5 www.zetex.com ? diodes incorporated, 2008 www.diodes.com electrical characteristics (at t amb = 25c unless otherwise stated). notes: (d) the drain current is restricted only when the device is in saturation (see graph ?typical output characteristic?). this allows the device to be used in the fully on state without interference from the current limit. the device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. parameter symbol min typ max unit conditions static characteristics drain-source clamp voltage v ds(az) 60 65 70 v i d =10ma off-state drain ccrrent i dss 500 na v ds =12v, v in =0v off-state drain current i dss 1 a v ds =36v, v in =0v input threshold voltage v in(th) 0.7 1 1.5 v v ds =v gs , i d =1ma input current i in 60 100 a v in =+3v input current i in 120 200 a v in =+5v input current while over temperature active 400 a v in =+5v static drain-source on-state resistance r ds(on) 400 600 m v in =+3v, i d =0.5a static drain-source on-state resistance r ds(on) 350 500 m v in =+5v, i d =0.5a continuous drain current (a) i d 0.9 a v in =3v; t a =25c continuous drain ccurrent (a) i d 1.0 a v in =5v; t a =25c continuous drain current (b) i d 1.2 a v in =3v; t a =25c continuous drain current (b) i d 1.3 a v in =5v; t a =25c current limit i d(lim) 0.7 1.7 a v in =+3v, current limit (c) i d(lim) 12.2 av in =+5v dynamic characteristics turn-on delay time t d(on) 5 s v dd =12v, i d =0.5a, v gs =5v rise time t r 10 s turn-off delay time t d(off) 45 s fall time f f 15 s
ZXMS6004SG issue 1 - december 2008 6 www.zetex.com ? diodes incorporated, 2008 www.diodes.com electrical characteristics - continued note: (a) over-temperature protection is designed to prevent device destruction under fault condit ions. fault conditions are considered as ?outside? normal operating range, so this part is not designed to withstand over-temperature for extended periods.. parameter symbol min typ max unit conditions over-temperature protection thermal overload trip temperature (a) tjt 150 175 c thermal hysteresis (a) 10 c
ZXMS6004SG issue 1 - december 2008 7 www.zetex.com ? diodes incorporated, 2008 www.diodes.com typical characteristics
ZXMS6004SG issue 1 - december 2008 8 www.zetex.com ? diodes incorporated, 2008 www.diodes.com
ZXMS6004SG issue 1 - december 2008 9 www.zetex.com ? diodes incorporated, 2008 www.diodes.com package information - sot223 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.8 - 0.071 d 6.30 6.70 0.248 0.264 a1 0.02 0.1 0.0008 0.004 e 2.30 bsc 0.0905 bsc a2 1.55 1.65 0.0610 0.0649 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 -
ZXMS6004SG issue 1 - december 2008 10 www.zetex.com ? diodes incorporated, 2008 www.diodes.com sales offices the americas 3050 e. hillcrest drive westlake village, ca 91362-3154 tel: (+1) 805 446 4800 fax: (+1) 805 446 4850 europe kustermann-park balanstra?e 59, d-81541 mnchen germany tel: (+49) 894 549 490 fax: (+49) 894 549 4949 taiwan 7f, no. 50, min chuan road hsin-tien taipei, taiwan tel: (+886) 289 146 000 fax: (+886) 289 146 639 shanghai rm. 606, no.1158 changning road shanghai, china tel: (+86) 215 241 4882 fax (+86) 215 241 4891 shenzhen anlian plaza, #4018 jintian road futian cbd, shenzhen, china tel: (+86) 755 882 849 88 fax: (+86) 755 882 849 99 korea 6 floor, changhwa b/d, 1005-5 yeongtong-dong, yeongtong-gu, suwon-si, gyeonggi-do, korea 443-813 tel: (+82) 312 731 884 fax: (+82) 312 731 885 definitions product change diodes incorporated reserves the right to alter, without notice, specifications, desi gn, price or conditions of supply of any p roduct or service. customers 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esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance diodes inc. is committed to environmental excellence in all as pects of its operations which includes meeting or exceeding regul atory requirements with respect to the use of hazardous substances. nu merous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. all diodes zetex components are co mpliant with the rohs directive, and through this it is supporting its customers in their com pliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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